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 Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD2148
DESCRIPTION With TO-3PML package High voltage ,high speed Low collector saturation voltage APPLICATIONS High speed switching power supply output applications PINNING
PIN 1 2 3 DESCRIPTION Base Collector Emitter Fig.1 simplified outline (TO-3PML) and symbol
Absolute maximum ratings (Ta=25ae )
SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature TC=25ae Open emitter Open base Open collector CONDITIONS VALUE 1500 700 5 8 16 4 50 150 -55~150 ae ae UNIT V V V A A A W
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25ae unless otherwise specified PARAMETER CONDITIONS MIN
2SD2148
SYMBOL
TYP.
MAX
UNIT
V(BR)CEO
Collector-emitter breakdown voltage
IC=5mA , IB=0
700
V
V(BR)EBO VCE(sat)
Emitter-base breakdown voltage
IE=1mA , IC=0 IC=7A ;IB=1.4A
5
V
Collector-emitter saturation voltage
5.0
V
VBE(sat)
Base-emitter saturation voltage
IC=7A ;IB=1.4A
1.5
V
ICBO
Collector cut-off current
VCB=800V; IE=0
10
|I
A
IEBO
Emitter cut-off current
VEB=5V; IC=0
10
|I
A
hFE-1
DC current gain
IC=1A ; VCE=5V
8
hFE-2
DC current gain
IC=7A ; VCE=5V
4
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SD2148
Fig.2 outline dimensions(unindicated tolerance:A
0.10 mm)
3


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